The TN2524 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperatur.
• 2V Maximum Low Threshold
• High Input Impedance
• 125 pF Maximum Low Input Capacitance
• Fast Switching Speeds
• Low On-Resistance
• Free from Secondary Breakdown
• Low Input and Output Leakage
Applications
• Logic-Level Interfaces (Ideal for TTL and CMOS)
• Solid-State Relays
• Battery-Operated Systems
• Photovoltaic Drives
• Analog Switches
• General Purpose Line Drivers
• Telecommunication Switches
General Description
The TN2524 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination pr.
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No. | Part # | Manufacture | Description | Datasheet |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs |
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STMicroelectronics |
25A SCRs |
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STMicroelectronics |
25A SCRs |
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STMicroelectronics |
25A SCRs |
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STMicroelectronics |
25A SCRs |
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STMicroelectronics |
25A SCRs |
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STMicroelectronics |
25A SCRs |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs |
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Microchip |
N-Channel Vertical DMOS FET |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs |
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Microchip |
N-Channel Vertical DMOS FET |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs |
|
|
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Microchip |
N-Channel Vertical DMOS FET |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs |
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