RJK1575DPA Datasheet

RJK1575DPA MOSFET

RJK1575DPA 150V - 25A - MOS FET High Speed Power Switching Features  Very low on-resistance RDS(on) = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)  Low leakage current  High speed switching Outline Pre.

Features

 Very low on-resistance RDS(on) = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)
 Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)
 Low leakage current
 High speed switching Outline Preliminary Datasheet R07DS0858EJ0200 Rev.2.00 Jan 08, 2013 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 678 5 678 D DDD 4 4 32 1 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current VGSS ID Note4 ID Note1 (pulse) .