of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.
• Ultra fast reverse recovery time: trr = 40 ns typ. (at IF = 10 A, di/dt = 100 A/μs)
• Low forward voltage: VF = 1.1 V typ. (at IF = 20 A)
• Low reverse current: IR = 1 μA max. (at VR = 360 V)
Outline
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
4
123
2, 4
1
3
1. Anode 2. Cathode 3. Anode 4. Cathode
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Maximum reverse voltage Continuous forward current Tc = 25°C
Tc = 100°C Peak surge forward current Junction to case thermal resistance Junction temperature
VRM IF Note1 IF Note1 IFSM Note1
θj-cd Tj Note.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | RJU36B2WDPK-M0 |
Renesas |
Dual Diode Ultra Fast Recovery Diode | |
2 | RJU36B1WDPF |
Renesas |
Dual Diode | |
3 | RJU36B1WDPK-M0 |
Renesas |
Dual Diode | |
4 | RJU3051SDPE |
Renesas |
Ultra Fast Recovery Diode | |
5 | RJU3052SDPD-E0 |
Renesas |
Ultra Fast Recovery Diode | |
6 | RJU |
Vishay |
Metal Oxide Resistors | |
7 | RJU002N06 |
Rohm |
2.5V Drive Nch MOS FET | |
8 | RJU002N06FRA |
ROHM |
MOSFET | |
9 | RJU003N03 |
Rohm |
2.5V Drive Nch MOS FET | |
10 | RJU003N03FRA |
Rohm |
2.5V Drive Nch MOSFET | |
11 | RJU1CF07DWA |
Renesas |
Fast Recovery Diode | |
12 | RJU1CF07DWS |
Renesas |
Fast Recovery Diode | |
13 | RJU4351SDPE |
Renesas |
Ultra Fast Recovery Diode | |
14 | RJU4351TDPP-EJ |
Renesas |
Single Diode Ultra Fast Recovery Diode | |
15 | RJU4352TDPP-EJ |
Renesas |
Single Diode Ultra Fast Recovery Diode |