NP36P06KDG P-channel Power MOSFET

NP36P06KDG P-channel Power MOSFET

This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 37.5 m Max. ( VGS = -4.5 V, ID = -18 A )  Low input capacitance : Ciss = 3100 pF Typ.  De.

Features

 Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 37.5 m Max. ( VGS = -4.5 V, ID = -18 A )
 Low input capacitance : Ciss = 3100 pF Typ.
 Designed for automotive application and AEC-Q101 qualified.
 Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 123 1. Gate 2. Drain 3. Source 4. Drain(Fin) MP-25ZK (TO-263) Absolute Maximum Ratings Gate Source Equivalent circuit Item Symbol Ratings Drain to Source Voltage (VGS = 0 V) VDSS -60 Gate to Source Voltage (VDS = 0 V) VGSS 20 Drain Current (DC) (Tc =.