FDT86102LZ Datasheet

FDT86102LZ N-Channel MOSFET

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and switching loss. G−S zener has been added to enhance ESD voltage level. Features • Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.6 A • Max rDS(on) = 38 .

Features

• Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.6 A
• Max rDS(on) = 38 mW at VGS = 4.5 V, ID = 5.5 A
• HBM ESD Protection Level > 6 kV Typical (Note 4)
• Very Low Qg and Qgd Compared to Competing Trench Technologies
• Fast Switching Speed
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and RoHS Compliant Applications
• DC − DC Conversion
• Inverter
• Synchronous Rectifier Specifications MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current −Continuous −Pulsed 100 V ±20 .