FDB050AN06A0 N-Channel MOSFET

FDB050AN06A0 N-Channel MOSFET

FDP050AN06A0 / FDB050AN06A0 — N-Channel PowerTrench® MOSFET FDP050AN06A0 / FDB050AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 5 mΩ Features • RDS(on) = 4.3 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • QG(tot) = 61 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Sing.

Features

• RDS(on) = 4.3 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
• QG(tot) = 61 nC ( Typ.) @ VGS = 10 V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse) Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies Formerly developmental type 82575 D D GDS TO-220 G S D2-PAK G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 135oC, .