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FDN335N |
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| Part Number | FDN335N |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel 2.5 V specified MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for ... |
| Features |
• 1.7 A, 20 V ♦ RDS(ON) = 0.07 W @ VGS = 4.5 V ♦ RDS(ON) = 0.1 W @ VGS = 2.5 V • Low Gate Charge (3.5 nC typical) • High Performance Trench Technology for Extremely Low RDS(ON) • High Power and Current Handling Capability • This Device is Pb−Free and is RoHS Compliant Applications • DC−DC Converter • Load Switch ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Value Unit VDSS Drain−Source Voltage 20 V VGSS Gate−Source Voltage ±8 V ID Drain Current Continuous (Note 1a) 1.7 A Pulsed 8 PD Power Dissipation (Note 1a) for Single Operation (Note 1b) 0.... |
| Document |
 FDN335N Data Sheet
PDF 288.03KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Fairchild Semiconductor |
N-Channel MOSFET |
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Fairchild Semiconductor |
single P-Channel MOSFET |
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ON Semiconductor |
P-Channel MOSFET |
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Fairchild Semiconductor |
N-Channel MOSFET |
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ON Semiconductor |
N-Channel MOSFET |
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DCY |
FET |
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Fairchild Semiconductor |
P-Channel MOSFET |
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ON Semiconductor |
P-Channel MOSFET |
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Fairchild Semiconductor |
N-Channel MOSFET |
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ON Semiconductor |
N-Channel MOSFET |
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