FDG1024NZ Dual N-Channel MOSFET

FDG1024NZ Dual N-Channel MOSFET

This dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage appli.

Features

• Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A
• Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A
• Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A
• Max rDS(on) = 389 mW at VGS = 1.5 V, ID = 0.8 A
• HBM ESD Protection Level > 2 kV (Note 3)
• Very Low Level Gate Drive Requirements Allowing Operation in 1.5 V Circuits (VGS(th) < 1 V)
• Very Small Package Outline SC−88/SC−70 6 Lead
• RoHS Compliant
• These Device is Halogen Free MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage ±8 V ID.