FDD8880 N-Channel MOSFET

FDD8880 N-Channel MOSFET

This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features • rDS(ON) = 9 mW, VGS = 10 V, ID = .

Features

• rDS(ON) = 9 mW, VGS = 10 V, ID = 35 A
• rDS(ON) = 12 mW, VGS = 4.5 V, ID = 35 A
• High Performance Trench Technology for Extremely Low rDS(ON)
• Low Gate Charge
• High Power and Current Handling Capability
• These Devices are Pb−Free and are RoHS Compliant Applications
• DC/DC Converters MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Continuous (TA = 25°C, Current VGS = 10 V) (Note 1) 58 A Continuous (TA = 25°C, VGS = 4.5 V) (Note 1) 51 A Continuous (Tamb = .