FDMS3664S Dual N-Channel MOSFET

FDMS3664S Dual N-Channel MOSFET

This device includes two specialized N−Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficien.

Features

Q1: N−Channel
• Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A
• Max RDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N−Channel
• Max RDS(on) = 2.6 mW at VGS = 10 V, ID = 25 A
• Max RDS(on) = 3.2 mW at VGS = 4.5 V, ID = 22 A
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
• MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
• This Device is Pb−Free, Halide Free and is RoHS Compliant Applications
• Computing
• Communications
• General Purpose Point of Load
• Notebook VCORE DATA SHEET www.onsemi.com Pin 1 G.