FDMC86244-L701 N-Channel MOSFET

FDMC86244-L701 N-Channel MOSFET

This N−Channel MOSFET is produced using ON Semiconductor‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.8 A •.

Features

• Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.8 A
• Max rDS(on) = 186 mW at VGS = 6 V, ID = 2.4 A
• Low Profile − 1 mm Max in Power 33
• 100% UIL Tested
• These Devices are Pb−Free and are RoHS Compliant Applications
• DC − DC Conversion www.onsemi.com 8 765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC86244 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DQ FDMC86244−L701 MARKING DIAGRAM ON AXYKK FDMC 86244 FDMC 86244 ALYW FDMC86244 FDMC86244−L701 FDMC86244 A XY KK L YW = Specific Device Code = Assembly Site = 2−Digit Date Code = 2−Digit Lot Run Tracea.