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This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance and zener diode pr.
a MOSFET with low on−state resistance and zener diode protection against ESD. The MicroFETt 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
• Max rDS(on) = 20 mW at VGS = −4.5 V, ID = −9.4 A
• Max rDS(on) = 24 mW at VGS = −2.5 V, ID = −8.6 A
• Max rDS(on) = 34 mW at VGS = −1.8 V, ID = −7.2 A
• Low Profile − 0.8 mm Maximum in the New Package MicroFET
2x2 mm
• HBM ESD Protection Level > 2.8 kV Typical (Note 3)
• Free from Halogenated Compounds and Antimony Oxides
• This Device is Pb−Free, Halide Free and is RoHS Co.
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Fairchild Semiconductor |
MOSFET |
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Tuofeng Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
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Fairchild Semiconductor |
Single P-Channel PowerTrench MOSFET |
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ON Semiconductor |
P-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
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ON Semiconductor |
P-Channel MOSFET |
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ON Semiconductor |
N-Channel MOSFET |
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Fairchild Semiconductor |
Dual P-Channel PowerTrench MOSFET |
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ON Semiconductor |
Dual P-Channel MOSFET |
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Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET |
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