FDMA2002NZ Dual N-Channel MOSFET

FDMA2002NZ Dual N-Channel MOSFET

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra−portable applications. It features two independent N−Channel MOSFETs with low on−state resistance for minimum conduction losses. The MicroFETt 2x2 offers exceptional .

Features

two independent N−Channel MOSFETs with low on−state resistance for minimum conduction losses. The MicroFETt 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features
• 2.9 A, 30 V RDS(on) = 123 mW at VGS = 4.5 V RDS(on) = 140 mW at VGS = 3.0 V RDS(on) = 163 mW at VGS = 2.5 V
• Low Profile − 0.8 mm Maximum − In the New Package MicroFET 2x2 mm
• HBM ESD Protection Level > 1.8 kV (Note 3)
• Free from Halogenated Compounds and Antimony Oxides
• This Device is Pb−Free, Halide Free and is RoHS Compliant DATA SHEET www.onsemi.com VDS 3.