Bipolar Transistors Silicon PNP Epitaxial Type TTA006B 1. Applications • Power Amplifiers • Audio-Frequency Amplifiers 2. Features (1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) Complementary to TTC011B : VCEO = -230 V (min) : Cob = 30 pF (typ..
(1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) Complementary to TTC011B : VCEO = -230 V (min) : Cob = 30 pF (typ.) : fT = 70 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTA006B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. 4. Absolute Maximum Ratings (Note) (Ta = 25 � unless .
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | TTA0001 |
INCHANGE |
PNP Transistor | |
2 | TTA0001 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
3 | TTA0002 |
INCHANGE |
PNP Transistor | |
4 | TTA0002 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
5 | TTA003 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
6 | TTA004 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
7 | TTA004B |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
8 | TTA005 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
9 | TTA007 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
10 | TTA008B |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
11 | TTA009 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
12 | TTA010 |
Toshiba |
Silicon PNP Triple-Diffused Type Bipolar Transistors | |
13 | TTA011 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
14 | TTA012 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
15 | TTA013 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |