UT2312H UTC N-CHANNEL POWER MOSFET

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UT2312H

UTC
UT2312H
UT2312H UT2312H
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Part Number UT2312H
Manufacturer UTC
Description The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications....
Features * RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and electrical capabilities * High density cell design for ultra low on-resistance
 SYMBOL 3.Drain Power MOSFET 3 2 1 SOT-23-3 (JEDEC TO-236) 1.Gate 2.Source
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2312HL-AE2-R UT2312HG-AE2-R Note: Pin Assignment: G: Gate S: Source D: Drain UT2312HG-AE2-R (1)Packing Type (2)Package Type (3)Green Package Package SOT-23-3 Pin Assignment 1 2 3 G S D Packing Tape Reel (1) R: Tap...

Document Datasheet UT2312H Data Sheet
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