VRF2933 RF Power MOSFET

VRF2933 RF Power MOSFET

VRF2933, VRF2933MP 50 V, 300 W, 150 MHz RF Power MOSFET Product Overview The VRF2933(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulati.

Features

• Improved ruggedness V(BR)DSS = 170 V
• 300 W with 22 dB typical gain at 30 MHz, 50 V
• Excellent stability and low IMD
• Common source configuration
• Available in matched pairs (VRF2933MP)
• 70:1 load VSWR capability at specified operating conditions
• Nitride passivated
• Refractory gold metallization
• High voltage replacement for SD2933
• Thermally enhanced package
• RoHS compliant © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004434A-page 1 VRF2933, VRF2933MP Device Specifications 1. Device Specifications This section shows the specifications of the VRF2933(MP) .