Search by part number and manufacturer or description
RJK5012DPP-A0 |
|
Click to view a larger image
| Part Number | RJK5012DPP-A0 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | RJK5012DPP-A0 500V - 12A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Qu... |
| Features |
Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Quality grade: Standard Outline RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) D 12 3 G S Datasheet R07DS1427EJ0100 Rev.1.00 Jun.11.2020 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID Notes4 12 A Drain peak current ID (pulse)Notes1 24 A Body-drain diode reverse drain current IDR 12 A Body-drain diod... |
| Document |
 RJK5012DPP-A0 Data Sheet
PDF 143.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Renesas |
MOS FET |
|
|
|
|
Renesas Technology |
Silicon N-Channel MOSFET |
|
|
|
|
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
|
|
|
Renesas Technology |
Silicon N Channel Power MOS FET |
|
|
|
|
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
|
|
|
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
|
|
|
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
|
|
|
Renesas Technology |
Silicon N-Channel MOSFET |
|
|
|
|
Renesas |
MOSFET |
|
|
|
|
Renesas Technology |
Silicon N-Channel MOSFET |
|