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FGY100T120RWD

ON Semiconductor
Part Number FGY100T120RWD
Manufacturer ON Semiconductor
Title Power IGBT
Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package...
Features • Low Conduction Loss and Optimized Switching • Maximum Junction Temperature − TJ = 175°C • Positive Temperature Coeffic...
Published Feb 5, 2023
Datasheet PDF File FGY100T120RWD PDF File


FGY100T120RWD
FGY100T120RWD


Features

• Low Conduction Loss and Optimized Switching
• Maximum Junction Temperature − TJ = 175°C
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
• 100% of the Parts are Dynamically Tested
• Short Circuit Rated
• RoHS...



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