FDB8870-F085 ON Semiconductor N-Channel Power MOSFET

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FDB8870-F085

ON Semiconductor
FDB8870-F085
FDB8870-F085 FDB8870-F085
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Part Number FDB8870-F085
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for...
Features
• rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low rDS(ON)
• Low gate charge
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant D GATE SOURCE TO-263AB DRAIN FDB SERIES (FLANGE) G S S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with R...

Datasheet Datasheet FDB8870-F085 Data Sheet
PDF 665.00KB


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