FDB8870-F085 |
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Part Number | FDB8870-F085 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for... |
Features |
• rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A • rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability • Qualified to AEC Q101 • RoHS Compliant D GATE SOURCE TO-263AB DRAIN FDB SERIES (FLANGE) G S S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with R... |
Datasheet |
FDB8870-F085 Data Sheet
PDF 665.00KB |
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