Document | DataSheet (1.28MB) |
K0900G - K2600G Axial Leaded Silicon Bilateral Voltage Triggered Features · Excellent capability of absorbing transient surge · Quick response to surge voltage (ns Level) · Glass passivated junctions · High voltage lcmp ignitors Mechanical Data · Case : DO-15 Molded plastic · Epoxy : UL94V-O rate f.
· Excellent capability of absorbing transient surge
· Quick response to surge voltage (ns Level)
· Glass passivated junctions
· High voltage lcmp ignitors
Mechanical Data
· Case : DO-15 Molded plastic
· Epoxy : UL94V-O rate flame retardant
· Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
· Polarity : Color band denotes cathode end
· Mounting position : Any
· Weight : 0.465 gram
A
B
A
Functional Diagram
C D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C un.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | K2600G |
JIEJIE |
Sidac | |
2 | K2600S |
JIEJIE |
Sidac | |
3 | K2601 |
Toshiba Semiconductor |
2SK2601 | |
4 | K2604 |
Toshiba Semiconductor |
2SK2604 | |
5 | K2605 |
Toshiba Semiconductor |
2SK2605 | |
6 | K2607 |
Toshiba Semiconductor |
Silicon N-Channel FET | |
7 | K2608 |
Toshiba Semiconductor |
2SK2608 | |
8 | K2610 |
Toshiba Semiconductor |
2SK2610 | |
9 | K2611 |
Toshiba Semiconductor |
2SK2611 | |
10 | K2611 |
Winsemi |
Silicon N-Channel MOSFET | |
11 | K2611B |
Winsemi |
Silicon N-Channel MOSFET | |
12 | K2613 |
Toshiba Semiconductor |
2SK2613 | |
13 | K2614 |
Toshiba |
2SK2614 | |
14 | K2617ALS |
Sanyo Semicon Device |
2SK2617ALS | |
15 | K2623TC480 |
IXYS |
Medium Voltage Thyristor |