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IGT60R070D1 |
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| Part Number | IGT60R070D1 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IGT60R070D1 IGT60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Features Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of ... |
| Features |
Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) 1 SK G G SK 1 Benefits Improves system efficiency Improves power density Enables higher operating frequency System cost reduction savings Reduces EMI Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications Industrial, telecom, datacenter SMPS based on the half-bridge t... |
| Document |
 IGT60R070D1 Data Sheet
PDF 541.19KB |
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Infineon |
Power Transistor |
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Infineon |
Power Transistor |
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Infineon |
600V enhancement-mode Power Transistor |
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Infineon |
Power Transistor |
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Infineon |
Power Transistor |
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Infineon |
Power Transistor |
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Infineon |
Power Transistor |
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Infineon |
Power Transistor |
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GE |
Insulated Gate Bipolar Transistor |
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GE |
Insulated Gate Bipolar Transistor |
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