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BSB044N08NN3

Infineon
Part Number BSB044N08NN3
Manufacturer Infineon
Description Power MOSFET
Published Oct 24, 2022
Detailed Description BSB044N08NN3 G OptiMOS™3 Power-MOSFET Features • Optimized technology for DC/DC converters • Excellent gate charge x R ...
Datasheet PDF File BSB044N08NN3 PDF File

BSB044N08NN3
BSB044N08NN3


Overview
BSB044N08NN3 G OptiMOS™3 Power-MOSFET Features • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • Dual sided cooling • low parasitic inductance Product Summary VDS RDS(on),max ID 80 V 4.
4 mW 90 A CanPAKTM M MG-WDSON-2 • Low profile (<0.
7mm) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Compatible with DirectFET® package MN footprint and outline2) Type BSB044N08NN3 G Package MG-WDSON-2 Outline MN Marking 0208 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current ID V GS=10 V, T C=25 °C 90 V GS=10 V, T C=100 °C 68 V GS=10 V, T A=25 °C, R thJA=58 K/W2) 18 Pulsed drain current3) I D,pulse T C=25 °C 360 Avalanche energy, single pulse E AS I D=30 A, R GS=25 W 660 Gate source voltage V GS ±20 1) J-STD20 and JESD22 2) DirectFET® is a trademark of International Rectfier Corporation BSB028N06NN3 G uses DirectFET® technology licensed from International Rectifier Corporation Unit A mJ V Rev.
2.
0 page 1 2011-07-18 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=58 K/W2) Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 BSB044N08NN3 G Value Unit 78 W 2.
2 -40 .
.
.
150 °C 55/150/56 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC bottom - 1.
0 - K/W top - - 1.
6 Device on PCB R thJA 6 cm2 cooling area2) - - 58 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 80 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=97 µA 2 2.
8 3.
5 Zero gate voltage drain current I DSS V DS=80...


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