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IAUC100N10S5L040

Infineon
Part Number IAUC100N10S5L040
Manufacturer Infineon
Description Power Transistor
Published Aug 28, 2022
Detailed Description OptiMOSTM-5 Power-Transistor Features • N-channel - Enhancement mode - Logic level • AEC qualified • MSL1 up to 260°C pe...
Datasheet PDF File IAUC100N10S5L040 PDF File

IAUC100N10S5L040
IAUC100N10S5L040

Overview
OptiMOSTM-5 Power-Transistor Features • N-channel - Enhancement mode - Logic level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IAUC100N10S5L040 Product Summary VDS RDS(on) ID 100 V 4 mW 100 A PG-TDSON-8 1 Type IAUC100N10S5L040 Package PG-TDSON-8 Marking 5N10L040 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage ID I D,pulse E AS I AS V GS T C=25°C, V GS=10V T C=100°C, V GS=10V T C=25°C I D=50A - Power dissipation P tot T C=25°C, T J =175°C Operating and storage temperature T j, T stg - Value Unit 100 A 100 400 150 mJ 86 A ±20 V 167 W -55 .
.
.
+175 °C Rev.
1.
0 page 1 2019-01-28 IAUC100N10S5L040 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC - Values Unit min.
typ.
max.
- - 0.
9 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 100 - -V Gate threshold voltage V GS(th) V DS=V GS, I D= 90µA 1.
2 1.
7 2.
2 Zero gate voltage drain current I DSS V DS=100V, V GS=0V, T j=25 °C - 0.
1 1 µA V DS=100V, V GS=0V, T j=125°C2) - Gate-source leakage current I GSS V GS=20V, V DS=0V - Drain-source on-state resistance R DS(on) V GS=4.
5V, I D=50 A - V GS=10 V, I D=50 A - Gate resistance2) RG - 10 100 - 100 nA 4.
3 5.
7 mW 3.
3 4 1.
3 -W Rev.
1.
0 page 2 2019-01-28 IAUC100N10S5L040 Parameter Symbol Conditions min.
Values typ.
Unit max.
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss C oss Crss V GS=0 V, V DS=50V, f =1MHz - 4000 5200 pF - 660 860 - 28 42 t d(on) - 6 - ns tr V DD=50V, V...


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