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IAUC100N08S5N043

Infineon
Part Number IAUC100N08S5N043
Manufacturer Infineon
Description Power Transistor
Published Aug 28, 2022
Detailed Description OptiMOS™-5 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow ...
Datasheet PDF File IAUC100N08S5N043 PDF File

IAUC100N08S5N043
IAUC100N08S5N043

Overview
OptiMOS™-5 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IAUC100N08S5N043 Product Summary VDS RDS(on) ID 80 V 4.
3 mW 100 A PG-TDSON-8 1 1 Type Package IAUC100N08S5N043 PG-TDSON-8 Marking 5N08043 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=10V T C=100 °C, V GS=10 V1) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS T C=25 °C I D=50 A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value Unit 100 A 76 400 120 mJ 100 A ±20 V 125 W -55 .
.
.
+175 °C 55/175/56 Rev.
1.
0 page 1 2018-07-24 IAUC100N08S5N043 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC - Values Unit min.
typ.
max.
- - 1.
2 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 80 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=63 µA 2.
2 3.
0 3.
8 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.
1 1 µA V DS=80 V, V GS=0 V, T j=85 °C2) - Gate-source leakage current I GSS V GS=20 V, V DS=0 V - Drain-source on-state resistance RDS(on) V GS=6 V, I D=25 A - Gate resistance2) V GS=10 V, I D=50 A - RG - 1 20 - 100 nA 5.
0 6.
1 mΩ 3.
6 4.
3 1.
1 -W IAUC100N08S5N043 Parameter Symbol Conditions min.
Values typ.
Unit max.
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss - C oss V GS=0 V, V DS=40 V, f =1 MHz - Crss - t d(on) - tr V DD=...


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