DatasheetsPDF.com

IAUC100N04S6L020

Infineon
Part Number IAUC100N04S6L020
Manufacturer Infineon
Description Power Transistor
Published Aug 28, 2022
Detailed Description IAUC100N04S6L020 OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive appli...
Datasheet PDF File IAUC100N04S6L020 PDF File

IAUC100N04S6L020
IAUC100N04S6L020


Overview
IAUC100N04S6L020 OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 2.
0 mW 100 A PG-TDSON-8 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Product (RoHS compliant) 1 • 100% Avalanche tested Type IAUC100N04S6L020 Package PG-TDSON-8 Marking 6N04L020 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=20A, R G,min=25W Avalanche current, single pulse I AS R G,min=25W Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - Value 100 100 400 147 20 ±16 75 -55 .
.
.
+175 Unit A mJ A V W °C Rev.
1.
0 page 1 2019-04-01 IAUC100N04S6L020 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA 6 cm2 cooling area3) Values Unit min.
typ.
max.
- - 2.
0 K/W - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=32µA I DSS V DS=40V, V GS=0V, T j=25°C V DS=40V, V GS=0V, T j=125°C2) I GSS V GS=16V, V DS=0V R DS(on) V GS=4.
5V, I D=50A V GS=10V, I D=50A 40 - -V 1.
2 1.
6 2.
0 - - 1 µA - - 10 - - 100 nA - 2.
26 2.
70 mW - 1.
66 2.
04 Rev.
1.
0 page 2 2019-04-01 IAUC100N04S6L020 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)