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2SC5886A

Toshiba
Part Number 2SC5886A
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jul 3, 2022
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications DC/DC Converter Applications 2...
Datasheet PDF File 2SC5886A PDF File

2SC5886A
2SC5886A

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications DC/DC Converter Applications 2SC5886A Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.
5 A) • Low collector-emitter saturation: VCE (sat) = 0.
22 V (max) • High-speed switching: tf = 95 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEX VCEO VEBO IC ICP IB Pc Tj Tstg 120 V 100 V 50 9 V 5 A 10 0.
5 A 1 W 20 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.
36 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 2004-05 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf VCB = 120 V, IE = 0 VEB = 9 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.
5 A VCE = 2 V, IC = 1.
6 A IC = 1.
6 A, IB = 32 mA IC = 1.
6 A, IB = 32 mA See Figure 1.
VCC ∼− 24 V, RL = 15 Ω IB1 = 32 mA, IB2 = − 53 mA ...


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