D1878 NPN Transistor

D1878 NPN Transistor

·High Breakdown Voltage- : VCBO= 1300V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MA.

Features

Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1300V ; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 4A ; VCE= 5V VECF C-E Diode Forward Voltage IF= 5A tf Fall Time IC= 4A , IB1= 0.8A ; IB2= -1.6A 2SD1878 MIN TYP. MAX UNIT 800 V 5.0 V 1.5 V 10 μA 1.0 mA 40 130 mA 8 5 10 2.0 V 0.3 μs NOTICE： ISC reserves the rights to make changes of the c.