MM120G3T65BM IGBT

MM120G3T65BM IGBT

June 2020 Version 01 MM120G3T65BM 650V 120A IGBT RoHS Compliant PRODUCT FEATURES □ 650V IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery APPL.

Features

□ 650V IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery APPLICATIONS □ Motor control □ UPS/PFC □ General purpose inverters 1 2 3 1.Gate 2.Collector 3.Emitter Type VCES MM120G3T65BM 650V IC 120A VCE(sat) TJ=25°C 1.6V TJmax 175°C Marking MM120G3T65BM Package TO-247 Plus ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage .