NVD5C648NL Datasheet

NVD5C648NL N-Channel MOSFET

isc N-Channel MOSFET Transistor NVD5C648NL FEATURES ·Drain Current –ID= 89A@ TC=25℃ ·Drain Source Voltage- VDSS= 60V(Min) ·Static Drain-Source On-Resistance RDS(on) :4.1mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXI.

Features

·Drain Current
  –ID= 89A@ TC=25℃
·Drain Source Voltage- VDSS= 60V(Min)
·Static Drain-Source On-Resistance RDS(on) :4.1mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 89 A IDM Drain Current-Single Pluse 510 A PD Total Dissipation @TC=25℃ 72 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTER.