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FCPF190N60E
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FCPF190N60E N-Channel MOSFET

Document Datasheet DataSheet (190.09KB)

FCPF190N60E N-Channel MOSFET

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfo.

Features


• 650 V @ TJ = 150°C
• Typ. RDS(on) = 160 mW
• Ultra Low Gate Charge (Typ. Qg = 63 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 178 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
• Lighting / Charger / Adapter www.onsemi.com VDSS 600 V RDS(ON) MAX 190 mW @ 10 V ID MAX 20.6 A D G S MOSFET GDS TO−220F Ultra Narrow Lead CASE 221BN MARKING DIAGRAM $Y&Z&3&K FCPF 190N60E © Semiconductor Components Industries, LLC, 2020 December, 2020 − Re.

FCPF190N60E FCPF190N60E FCPF190N60E
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