HM25P03K P-Channel Enhancement Mode Power MOSFET

HM25P03K P-Channel Enhancement Mode Power MOSFET

The HM25P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -25A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is .

Features

● VDS = -30V,ID = -25A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
●Battery Switch
●Load switch
●Power management HM25P03K D G S Schematic diagram HM25P03K Marking and pin assignment TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package HM25P03K HM25P03K TO-252-2L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gat.