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1N4150-1

Microsemi
Part Number 1N4150-1
Manufacturer Microsemi
Description SWITCHING DIODE
Published Mar 31, 2021
Detailed Description 1N4150-1 FEATURES • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 19500/231 • SWITCHING DIODE • METALLURGIC...
Datasheet PDF File 1N4150-1 PDF File

1N4150-1
1N4150-1

Overview
1N4150-1 FEATURES • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 19500/231 • SWITCHING DIODE • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 1uS: Surge Current B, sine 1S: Total Power Dissipation: Operating Current: Derating Factor: D.
C.
Reverse Voltage (VRWM): -65°C to +175°C -65°C to +175°C 4.
0A 0.
5A 500mW 200mA, TA= +25°C to +75°C 2mA/°C above TL (3/8”)= +75°C 50V DC ELECTRICAL CHARACTERISTICS VF IR Ambient IF (°C) mA Min Max Ambient Min Max Ambient V V (°C) V (dc) µA µA (°C) 25 1 .
54 .
62 25 50 - 0.
1 25 25 10 .
66 .
74 150 50 - 100 25 50 .
76 .
86 ...


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