SEMiX703GB12M7p IGBT

SEMiX703GB12M7p IGBT

SEMiX703GB12M7p SEMiX® 3p Trench IGBT Modules SEMiX703GB12M7p Features* • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High overload capability • Low loss high density IGBTs • Press-fit pins as auxiliary contacts • UL recognized, file no. E63532.

Features

• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature coefficient
• High overload capability
• Low loss high density IGBTs
• Press-fit pins as auxiliary contacts
• UL recognized, file no. E63532 Typical Applications
• AC inverter drives
• UPS
• Renewable energy systems Remarks
• Product reliability results are valid for Tj=150°C (recommended Tj,op=-40...+150°C)
• Visol between temperature sensor and power section is only 2500V
• For storage and case temperature with TIM see document “TP(*) SEMiX 3p” Absolute Maximum Ratings Symbol Conditions IGBT VCES IC .