SKiM601TMLI12E4B IGBT

SKiM601TMLI12E4B IGBT

SKiM601TMLI12E4B SKiM® 4 Trench IGBT Modules SKiM601TMLI12E4B Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for therm.

Features

• IGBT 4 Trench Gate Technology
• Solder technology
• VCE(sat) with positive temperature coefficient
• Low inductance case
• Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate
• Pressure contact technology for thermal contacts
• Spring contact system to attach driver PCB to the control terminals
• High short circuit capability, self limiting to 6 x IC
• Integrated temperature sensor Remarks*
• Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules)
• Recommended Top = -40 ...+150°C
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer di.