SEMiX305TMLI12E4B Datasheet

SEMiX305TMLI12E4B IGBT

SEMiX305TMLI12E4B SEMiX® 5 3-Level TNPC IGBT-Module SEMiX305TMLI12E4B Features • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design wit.

Features

• Solderless assembling solution with PressFIT signal pins and screw power terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature coefficient
• Low inductance case
• Reliable mechanical design with injection moulded terminals and reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside Remarks*
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tjop=150°C
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
• For storage and case t.