logo
Search by part number and manufacturer or description

D100E60 Datasheet

Download Datasheet
D100E60 File Size : 297.38KB

D100E60 Fast Switching Emitter Controlled Diode

Fast Switching Emitter Controlled Diode IDW100E60 Features:  600V Emitter Controlled technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175°C junction operating temperature  Easy paralleling  Pb-free lead plating; RoHS compliant  Complete product .

Features


 600V Emitter Controlled technology
 Fast recovery
 Soft switching
 Low reverse recovery charge
 Low forward voltage
 175°C junction operating temperature
 Easy paralleling
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models: http://www.infineon.com Applications:
 Welding
 Motor drives PG-TO247-3 Type IDW100E60 VRRM 600V IF 100A Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current TC = 25C TC = 90C TC = 100C Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave Maximum repetitive forward curr.

D100E60 D100E60 D100E60

Similar Product

No. Part # Manufacture Description Datasheet
1 D1000
Renesas
2SD1000 Datasheet
2 D1001
Renesas
2SD1001 Datasheet
3 D1001UK
Seme LAB
METAL GATE RF SILICON FET Datasheet
4 D1002UK
Seme LAB
METAL GATE RF SILICON FET Datasheet
5 D1003UK
Seme LAB
METAL GATE RF SILICON FET Datasheet
More datasheet from Infineon
Since 2014 :: D4U Semiconductor :: (Privacy Policy & Contact)