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SK20DGDL07E3ETE1
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SK20DGDL07E3ETE1 IGBT

Document Datasheet DataSheet (399.72KB)

SK20DGDL07E3ETE1 IGBT

SK20DGDL07E3ETE1 SEMITOP®E1 3-phase Converter-Inverter-Brake (CIB) Engineering Sample SK20DGDL07E3ETE1 Target Data Features* • Optimized design for superior thermal performance • Low inductive design • Press-Fit contact technology • 650V Trench IGBT3 (E3) • Robust and soft switching CAL4F diode tec.

Features


• Optimized design for superior thermal performance
• Low inductive design
• Press-Fit contact technology
• 650V Trench IGBT3 (E3)
• Robust and soft switching CAL4F diode technology
• PEP rectifier diode technology for enhanced power and environmental robustness
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532 Typical Applications
• Motor drives
• Air conditioning
• Auxiliary Inverters Remarks
• Recommended Tj,op=-40 ...+150 °C Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C IC λpast.

SK20DGDL07E3ETE1 SK20DGDL07E3ETE1 SK20DGDL07E3ETE1
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