EPC2034C Datasheet

EPC2034C Power Transistor

eGaN® FET DATASHEET EPC2034C – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 8 mΩ ID , 48 A D G S EPC2034C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure .

Features

stance, Junction-to-Ambient (Note 1) 45 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details EPC2034C eGaN® FETs are supplied only in passivated die form with solder bumps. Die Size: 4.6 mm x 2.6 mm
• High Frequency DC/DC Conversion
• Multi-level AC/DC Power Supplies
• Wireless Power
• Solar Micro Inverters
• Robotics
• Class-D Audio
• Low Inductance Motor Drives PARAMETER Static Characteristics (TJ= 25°C unle.