RD3P100SN N-Channel MOSFET

RD3P100SN N-Channel MOSFET

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 2.

Features

·Drain Current
  –ID= 10A@ TC=25℃
·Drain Source Voltage- : VDSS= 100V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 133mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 20 A PD Total Dissipation @TC=25℃ 20 W TJ M.