2N6425 INCHANGE Silicon PNP Power Transistor

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2N6425

INCHANGE
2N6425
2N6425 2N6425
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Part Number 2N6425
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications AB...
Features n Voltage IC= -0.25A; IB=-0.025A VBE(on) Base-Emitter On Voltage IC= -0.1A; VCE=-10V hFE DC Current Gain IC=-0.1A; VCE=-20V MIN TYP. MAX UNIT -300 V -100 uA -0.25 mA -2.5 V -1.0 V 35 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in eq...

Datasheet Datasheet 2N6425 Data Sheet
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