Search by part number and manufacturer or description
·Collector-Emitter Breakdown Voltage- : VCEO=100V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 120 V.
age IC=20A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC=50A; IB= 10A hFE-1 DC Current Gain IC=1A; VCE= 4V hFE-2 DC Current Gain IC=20A; VCE=4V hFE-3 DC Current Gain IC=50A; VCE= 4V MIN TYP. MAX UNIT 100 V 100 uA 50 uA 1.2 V 3 V 1.8 V 3.5 V 10 30 120 50 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide f.
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | 2N6270 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | 2N6270 |
SavantIC |
(2N6270 / 2N6271) Silicon Power Transistors |
|
| 3 | 2N6271 |
SavantIC |
(2N6270 / 2N6271) Silicon Power Transistors |
|
| 4 | 2N6271 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N6274 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 6 | 2N6274 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 7 | 2N6274 |
Seme LAB |
Bipolar NPN Device |
|
| 8 | 2N6274 |
Microsemi |
NPN POWER SILICON TRANSISTOR |
|
| 9 | 2N6274 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | 2N6274 |
Motorola |
High Power NPN SIlicon Transistor |
|
| 11 | 2N6275 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 12 | 2N6275 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 13 | 2N6275 |
Motorola |
High Power NPN SIlicon Transistor |
|
| 14 | 2N6276 |
Seme LAB |
Bipolar NPN Device |
|
| 15 | 2N6276 |
INCHANGE |
Silicon NPN Power Transistor |
|
Click to view a larger image
