2N6274 Silicon NPN Power Transistor

2N6274 Silicon NPN Power Transistor

·Collector-Emitter Breakdown Voltage- : VCEO=100V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 120 V.

Features

A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 50A; IB= 10A Hfe-1 DC Current Gain IC=1A; VCE= 4V hFE-2 DC Current Gain IC=20A; VCE= 4V hFE-3 DC Current Gain IC=50A; VCE= 4V 2N6274 MIN TYP. MAX UNIT 100 V 50 uA 0.1 mA 1 V 3 V 1.8 V 3.5 V 50 30 120 10 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide fo.