RCJ120N20 N-Channel MOSFET

RCJ120N20 N-Channel MOSFET

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 4.

Features

·Drain Current
  –ID= 12A@ TC=25℃
·Drain Source Voltage- : VDSS=200V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 325mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 52 W TJ Ma.