·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 38 A IDM Drain Current-Single Pluse .
·Drain Current
–ID= 38A@ TC=25℃
·Drain Source Voltage-
: VDSS=600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.15Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
38
A
IDM
Drain Current-Single Pluse
152
A
PD
Total Dissipation @TC=25℃
520
W
TJ
.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | APT6015LVFR |
Advanced Power Technology |
Power MOSFET | |
2 | APT6015LVR |
Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
3 | APT6015B2VFR |
Advanced Power Technology |
Power MOSFET | |
4 | APT6015B2VFR |
INCHANGE |
N-Channel MOSFET | |
5 | APT6015B2VR |
Advanced Power Technology |
Power MOSFET |