C3930 Silicon NPN Transistor

C3930 Silicon NPN Transistor

Transistors 2SC3930 Silicon NPN epitaxial planar type (0.425) For high-frequency amplification Complementary to 2SA1532 0.3+–00..01 Unit: mm 0.15+–00..0150 3 1.25±0.10 2.1±0.1 5˚ ■ Features • Optimum for RF amplification of FM/AM radios 0.2±0.1 • High transition frequency fT • S-Mini type .

Features

• Optimum for RF amplification of FM/AM radios 0.2±0.1
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing /
■ Absolute Maximum Ratings Ta = 25°C 1 2 (0.65) (0.65) 1.3±0.1 2.0±0.2 10˚ e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 30 0 to 0.1 0.9±0.1 0.9
  –+00..12 V n d ge. ed Collector-emitter voltage (Base open) VCEO 20 V sta tinu Emitter-base voltage (Collector open) VEBO 5 V a e cycle iscon Collector current IC 30 mA life d, d Collector power dis.