C3870 Silicon NPN Transistor

C3870 Silicon NPN Transistor

Power Transistors 2SC3870 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.7±0.1 10.0±0.2 4.2±0.2 s Features 5.5±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operat.

Features

5.5±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with / one screw φ3.1±0.1 1.3±0.2 1.4±0.1 e s Absolute Maximum Ratings (TC=25˚C) c type) Parameter Symbol Ratings Unit 14.0±0.5 Solder Dip 4.0 n d tage. ued Collector to base voltage VCBO 500 V a e cle s contin Collector to emitter voltage VCES 500 V cy is VCEO 400 V n u t life ed, d Emitter to base voltage VEBO 7 V duc typ Peak collector current ICP 15 A te tin ur P.