APT5010LVR N-Channel MOSFET

APT5010LVR N-Channel MOSFET

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 47 A IDM Drain Current-Single Pluse .

Features

·Drain Current
  –ID=47A@ TC=25℃
·Drain Source Voltage- : VDSS=500V(Min)
·Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 47 A IDM Drain Current-Single Pluse 188 A PD Total Dissipation @TC=25℃ 520 W TJ Ma.