APT60N60SCSG MOSFET

APT60N60SCSG MOSFET

600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOL MOS Po we r Se miconduc tors Super Junction MOSFET • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated •.

Features

431 Watts 3.45 W/°C -55 to 150 °C 260 50 V/ns 11 Amps 3 mJ 1950 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 600 RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 44A) IDSS Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) 0.045 25 250 ±100 VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 3mA) 2.1 3 3.9 CAUTION: These Device.