APT38N60BC6 |
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| Part Number | APT38N60BC6 |
| Manufacturer | Microsemi (https://www.microsemi.com/) |
| Description | APT38N60BC6 APT38N60SC6 600V 38A 0.099Ω COOLMOS Power Semiconductors Super Junction MOSFET • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extrem... |
| Features |
V/ns Amps mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX UNIT
BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
600
RDS(on) Drain-Source On-State Resistance 3 (VGS = 10V, ID = 18A)
0.099
IDSS
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
25 100
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1.2mA)
2.5
3
3.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handli... |
| Datasheet |
 APT38N60BC6 Data Sheet
PDF 143.44KB |
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