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Bipolar Transistors Silicon PNP Epitaxial Type TTA1452B TTA1452B 1. Applications • High-Current Switching 2. Features (1) Low collector-emitter saturation voltage: VCE(sat) = -0.4 V (max) (IC = -6 A , IB = -0.3 A) (2) High speed switching: tstg = 1 µs (typ.) (3) Complementary to TTC3710B 3. Packag.
(1) Low collector-emitter saturation voltage: VCE(sat) = -0.4 V (max) (IC = -6 A , IB = -0.3 A) (2) High speed switching: tstg = 1 µs (typ.) (3) Complementary to TTC3710B 3. Packaging and Internal Circuit 1. Base 2. Collector 3. Emitter TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Mounti.
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | TTA1452 |
INCHANGE |
PNP Transistor |
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| 2 | TTA1452B |
INCHANGE |
PNP Transistor |
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| 3 | TTA1586FU |
Toshiba Semiconductor |
Silicon PNP Transistor |
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| 4 | TTA1713 |
Toshiba |
Silicon PNP Transistor |
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| 5 | TTA1943 |
Toshiba |
Silicon PNP Transistor |
|
| 6 | TTA1943 |
nELL |
Silicon PNP Transistor |
|
| 7 | TTA1943 |
INCHANGE |
PNP Transistor |
|
| 8 | TTA0001 |
INCHANGE |
PNP Transistor |
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| 9 | TTA0001 |
Toshiba Semiconductor |
Silicon PNP Transistor |
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| 10 | TTA0002 |
INCHANGE |
PNP Transistor |
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| 11 | TTA0002 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 12 | TTA003 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
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| 13 | TTA004 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 14 | TTA004B |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
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| 15 | TTA005 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |
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